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Tridimensional electric field effect on diamagnetic susceptibility and polarisability of a donor impurity in a double quantum dot

R. Arraoui, Ed-Dahmouny Ayoub, A. Sali, K. El‐Bakkari, M. Jaouane, A. Fakkahi

2023The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics23 citationsDOI

Abstract

Theoretical calculations were used to evaluate the response of a tridimensional (spatial) external electric field on the binding energy (Eb), polarisability (α) of a hydrogenic donor impurity and diamagnetic susceptibility versus the dot width (Ld) and the tridimensional electric field intensity F, and the impurity location (x0) in a GaAs/Ga1−xAlxAs double symmetrical quantum dot. The numerical computations were accomplished by utilising the effective mass approximation and the variation method. Our calculations showed that the polarisability diminishes as the applied tridimensional electric field F rises, especially when the dot width is large. Nevertheless, this polarisability is independent of the tridimensional field strength F when the confinement is strong. It has been observed that the degeneracy of the binding energy is broken under the effect of a tridimensional field F. Furthermore, in the absence of a tridimensional field, the diamagnetic susceptibility χdia is symmetric in relation to the centre of the barrier material, having two peaks. However, this symmetry is broken when a spatial electric field is applied.

Topics & Concepts

DiamagnetismElectric fieldCondensed matter physicsQuantum dotImpurityPhysicsEffective mass (spring–mass system)Field (mathematics)ChemistryAtomic physicsMagnetic fieldQuantum mechanicsMathematicsPure mathematicsSemiconductor Quantum Structures and DevicesQuantum and electron transport phenomenaGaN-based semiconductor devices and materials
Tridimensional electric field effect on diamagnetic susceptibility and polarisability of a donor impurity in a double quantum dot | Litcius