A pre-reaction suppressing strategy for α-Ga<sub>2</sub>O<sub>3</sub> halide vapor pressure epitaxy using asymmetric precursor gas flow
Sunjae Kim, Hyeon Woo Kim, Hyeong-Yun Kim, Dae‐Woo Jeon, Sung Beom Cho, Ji-Hyeon Park
Abstract
We report on a high-quality α-Ga 2 O 3 epilayer grown on a sapphire (0001) substrate by suppressing the pre-reaction between the main precursors, GaCl and GaCl 3 , and O 2 .
Topics & Concepts
HalideEpitaxySapphireSubstrate (aquarium)Materials scienceHigh pressureFlow (mathematics)OptoelectronicsChemistryAnalytical Chemistry (journal)Inorganic chemistryNanotechnologyOrganic chemistryLayer (electronics)OpticsPhysicsEngineering physicsGeologyLaserOceanographyMechanicsGa2O3 and related materialsElectronic and Structural Properties of OxidesZnO doping and properties