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Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget

Chin-I Wang, Chun-Yuan Wang, Teng-Jan Chang, Yu‐Sen Jiang, Jing‐Jong Shyue, Hsin-Chih Lin, Miin‐Jang Chen

2021Applied Surface Science28 citationsDOI

Topics & Concepts

Atomic layer depositionTinFerroelectricityMaterials scienceThin filmAmorphous solidAnnealing (glass)CrystallizationOrthorhombic crystal systemOptoelectronicsChemical engineeringNanotechnologyDielectricCrystallographyComposite materialCrystal structureMetallurgyChemistryEngineeringFerroelectric and Negative Capacitance DevicesMXene and MAX Phase MaterialsSemiconductor materials and devices
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget | Litcius