Identifying the role of carrier overflow and injection current efficiency in a GaN-based micro-LED efficiency droop model
Yibo Liu, Mengyuan Zhanghu, Feng Feng, Zichun Li, Ke Zhang, Hoi Sing Kwok, Zhaojun Liu
Abstract
In this paper, we investigate the efficiency droop phenomenon in green and blue GaN-based micro-LEDs of various sizes. We discuss the distinct carrier overflow performance in green and blue devices by examining the doping profile extracted from capacitance-voltage characterization. By combining the size-dependent external quantum efficiency with the ABC model, we demonstrate the injection current efficiency droop. Furthermore, we observe that the efficiency droop is induced by injection current efficiency droop, with green micro-LEDs exhibiting a more pronounced droop due to more severe carrier overflow compared to blue micro-LEDs.
Topics & Concepts
Voltage droopLight-emitting diodeMaterials scienceOptoelectronicsQuantum efficiencyCapacitanceVoltageDiodeCurrent (fluid)Electrical engineeringPhysicsVoltage sourceQuantum mechanicsEngineeringElectrodeGaN-based semiconductor devices and materialsZnO doping and propertiesSemiconductor Quantum Structures and Devices