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Vertical β-Ga₂O₃ Schottky Barrier Diodes With Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination

Chen Hu, Hengyu Wang, Kuang Sheng

2022IEEE Electron Device Letters54 citationsDOI

Abstract

In this letter, high performance vertical <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 (001) Schottky Barrier Diodes (SBD) with field plate assisted negative beveled (FP-NB) and positive beveled (PB) termination are reported. For the SBD with FP-NB structure, the electrical field crowding is substantially suppressed owing to the field plate which is extended over the bevel. The reverse leakage current is reduced and the breakdown voltage of FP-NB SBD is improved over 1100V. A low differential ON-resistance of 2.6 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula> cm2, and a high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{{\text {on}}}/{I}_{{\text {off}}}$ </tex-math></inline-formula> ratio over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{9}}$ </tex-math></inline-formula> is achieved through etching recipe improvement, positive bevel with 67° mesa angle is successfully fabricated. The electric field crowding in SBD with PB termination is further suppressed owing to the reduction of positive charge at the edge. As a result, the breakdown voltage is significantly improved up to 1710 V. A Baliga’s figure of merit (FOM) of 0.80 GW/cm2 is achieved. Vertical <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 SBDs with FP-NB and PB termination show the great potential for future power rectifiers.

Topics & Concepts

BevelMaterials scienceSchottky barrierOptoelectronicsDiodeSchottky diodeMetal–semiconductor junctionElectrical engineeringEngineeringMechanical engineeringGa2O3 and related materialsZnO doping and propertiesElectronic and Structural Properties of Oxides
Vertical β-Ga₂O₃ Schottky Barrier Diodes With Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination | Litcius