Litcius/Paper detail

Multilayer interface design for reliable brazing of C/C-SiC to stainless steel: Cr-driven interfacial control and stress redistribution

Hao Zhu, Bo Cheng, Y. Song, Hyoung Seop Kim, Naibin Chen, Wenlong Zhou, Duo Liu, Shengpeng Hu, Xiaoguo Song

2026Advanced Composites and Hybrid Materials8 citationsDOIOpen Access PDF

Abstract

Reliable brazing of C/C-SiC composites to stainless steel is hindered by severe residual stresses and uncontrolled interfacial reactions. Here, we introduce a CuMnCr/Mo/Cu multilayer interface that aims to simultaneously regulates stress distribution and interfacial chemistry. Cr from the CuMnCr layer preferentially reacts with C/C-SiC, forming a Cr7C3 + Cr3Si reaction layer, while Fe and Cr from stainless steel diffuse into Cu to produce a (Cu, Fe, Cr) solid solution. The Mo interlayer mainly acts as both a diffusion barrier and a compliant stress absorber, isolating reaction zones and concentrating part of the residual stress within itself. Finite-element simulations confirm that this design reduces peak Mises stress from 684 MPa to 444 MPa. At an optimized brazing temperature of 980 °C, the joint achieves a shear strength of 32.2 MPa, corresponding to 57.5% of the intrinsic strength of C/C-SiC. Thermodynamic, kinetic, and first-principles analyses suggest that Cr plays a dominant role in interfacial bonding, whereas Mo contributes to the redistribution of residual stress and mitigation of brittle fracture. Overall, this multilayer strategy provides mechanistic insight into how Cr-driven interfacial control can be combined with Mo-assisted stress management to design reliable C/C-SiC-metal joints, while the long-term service behavior and extension to other composite/steel combinations remain to be clarified in future work.

Topics & Concepts

Materials scienceBrazingResidual stressRedistribution (election)Composite materialBrittlenessStress (linguistics)MetallurgyShear stressJoint (building)Shear strength (soil)Layer (electronics)Shear (geology)Stress concentrationvon Mises yield criterionResidualCrackingAdvanced ceramic materials synthesisGraphite, nuclear technology, radiation studiesSilicon Carbide Semiconductor Technologies