A Novel High-Endurance FeFET Memory Device Based on ZrO<sub>2</sub> Anti-Ferroelectric and IGZO Channel
Zhongxin Liang, Kechao Tang, Junchen Dong, Qijun Li, Yuejia Zhou, Runteng Zhu, Yanqing Wu, Dedong Han, Ru Huang
Abstract
We successfully developed a high-performance FeFET memory device by integrating ZrO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> anti-ferroelectric with IGZO channel for the first time. The replacement of conventional HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ferroelectric by anti-ferroelectric ZrO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> effectively reduces the coercive field and boosts endurance. Furthermore, the IGZO channel allows for an interlayer free gate stack that lowers the working voltage and enhances retention compared to Si channel. The novel FeFET demonstrates a high endurance up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> cycles, a good retention of > 10 years, and a low working voltage of 2 V, greatly empowering the device for future embedded memory with ultra-low energy consumption.