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Effect of asymmetric gate–drain overlap on ambipolar behavior of double-gate TFET and its impact on HF performances

Chandan Kumar Pandey, Avtar Singh, Saurabh Chaudhury

2020Applied Physics A46 citationsDOI

Topics & Concepts

Ambipolar diffusionDrain-induced barrier loweringCapacitanceOptoelectronicsQuantum tunnellingTunnel field-effect transistorScalingMaterials scienceCutoff frequencyParasitic capacitanceGain–bandwidth productFigure of meritDiffusion capacitanceChemistryField-effect transistorElectrical engineeringTransistorPhysicsVoltageElectronCMOSEngineeringElectrodeGeometryMathematicsOperational amplifierQuantum mechanicsPhysical chemistryAmplifierAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesFerroelectric and Negative Capacitance Devices
Effect of asymmetric gate–drain overlap on ambipolar behavior of double-gate TFET and its impact on HF performances | Litcius