Significant Degradation Reduction in Metal Oxide Thin-Film Transistors via the Interaction of Ionized Oxygen Vacancy Redistribution, Self-Heating Effect, and Hot Carrier Effect
Guanming Zhu, Meng Zhang, Zhendong Jiang, Jinyang Huang, Yuxiang Huang, Sunbin Deng, Lei Lü, Man Wong, Hoi Sing Kwok
Abstract
In this work, device degradation of metal oxide (MO) thin-film transistors (TFTs) under positive bias stress, linear stress, and saturation stress is systematically investigated. A significant degradation reduction in InGaZnO TFTs is observed for the first time under saturation stress. Incorporated with electric field simulations and temperature simulations, a degradation model, considering the interaction of ionized oxygen vacancy redistribution, self-heating effect, and hot carrier effect, is tentatively proposed to understand the degradation behaviors under various stress combinations. Moreover, a similar degradation reduction phenomenon is also reproduced in InSnZnO TFTs, demonstrating the applicability of the proposed degradation model in MO TFTs.