Ambipolarity Suppression of Band Gap and Gate Dielectric Engineered Novel Si0.2Ge0.8/GaAs JLTFET Using Gate Overlap Technique
Kaushal Kumar, Ajay Kumar, Vinay Kumar, Aditya Jain, S. C. Sharma
Topics & Concepts
Materials scienceAmbipolar diffusionGate dielectricOptoelectronicsDielectricLinearityTransistorBand gapIonElectrical engineeringVoltagePlasmaPhysicsEngineeringQuantum mechanicsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignFerroelectric and Negative Capacitance Devices