A fully printed ultrafast Si/WS<sub>2</sub> quantum dot photodetector with very high responsivity over the UV to near-infrared region
Subhankar Debnath, Koushik Ghosh, M. Meyyappan, P. K. Giri
Abstract
% and an ultrafast photoresponse (7.8 μs rise time and 9.5 μs fall time) make the device an attractive candidate as an efficient photodetector. The origin of high-performance photodetection is traced to a nearly defect-free interface at the heterojunction, leading to highly efficient charge separation and high photocurrent. Finally, the 2D-printed device exhibits good photodetection even in self-powered conditions, which is very attractive.
Topics & Concepts
PhotodetectionPhotodetectorResponsivityOptoelectronicsMaterials scienceQuantum efficiencyPhotocurrentQuantum dotHeterojunctionUltrashort pulseDark currentPhotodiodeSpecific detectivityOpticsPhysicsLaser2D Materials and ApplicationsNanowire Synthesis and ApplicationsGa2O3 and related materials