Enhancement in Analog/RF and Power Performance of Underlapped Dual-Gate GaN-Based MOSHEMTs with Quaternary InAlGaN Barrier of Varying Widths
Hrit Mukherjee, Mousiki Kar, Atanu Kundu
Topics & Concepts
High-electron-mobility transistorOptoelectronicsMaterials scienceTernary operationHeterojunctionBarrier layerTransistorQuantum wellPower densityAmplifierVoltageLayer (electronics)Power (physics)Electrical engineeringCMOSNanotechnologyOpticsPhysicsComputer scienceQuantum mechanicsEngineeringLaserProgramming languageGaN-based semiconductor devices and materialsGa2O3 and related materialsRadio Frequency Integrated Circuit Design