Single <i>β</i>-Ga2O3 nanowire based lateral FinFET on Si
Siyuan Xu, Lining Liu, Guangming Qu, Xingfei Zhang, Chunyang Jia, Songhao Wu, Yuanxiao Ma, Young‐Jin Lee, Guodong Wang, Ji‐Hyeon Park, Yiyun Zhang, Xiaoyan Yi, Yeliang Wang, Jinmin Li
Abstract
A fin field-effect transistor (FinFET) based on single β-Ga2O3 nanowire with a diameter of ∼60 nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of ∼4 × 108, a system-limit low leakage current (∼4 fA), and a relatively low subthreshold swing (∼110 mV). Simulation shows that the channel of the FinFET depletes much faster than that of the back-gate FET with negative gate bias, which is consistent with the measurement results. Moreover, trap-related 1/f noise and 1/f2 noise have been identified according to low frequency noise analysis, and a carrier number fluctuation is expected to be the dominant 1/f noise mechanism in the β-Ga2O3 FinFET in this work.