Vertically Extended Drain Double Gate Si1−xGex Source Tunnel FET : Proposal & Investigation For Optimized Device Performance
Anand Raj, Sangeeta Singh, Kumari Nibha Priyadarshani, Rajeev Arya, Alok Naugarhiya
Topics & Concepts
TransconductanceMaterials scienceTunnel field-effect transistorOptoelectronicsSubthreshold slopeField-effect transistorMetal gateTransistorGermaniumMole fractionGate oxideElectrical engineeringVoltageSiliconPhysicsThermodynamicsEngineeringAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies