Litcius/Paper detail

Atomic structures of grain boundaries for Si and Ge: A simulated annealing method with artificial-neural-network interatomic potentials

Tatsuya Yokoi, Hirotaka Kato, Yu Oshima, Katsuyuki Matsunaga

2022Journal of Physics and Chemistry of Solids10 citationsDOI

Topics & Concepts

MisorientationInteratomic potentialSimulated annealingMolecular dynamicsArtificial neural networkGrain boundaryAnnealing (glass)Tilt (camera)Molecular physicsMaterials scienceComputational physicsCrystallographyChemistryPhysicsComputational chemistryMicrostructureAlgorithmComputer scienceGeometryArtificial intelligenceComposite materialMathematicsMachine Learning in Materials ScienceSemiconductor materials and interfacesSemiconductor materials and devices
Atomic structures of grain boundaries for Si and Ge: A simulated annealing method with artificial-neural-network interatomic potentials | Litcius