Intrinsic Nonlinear Spin Hall Effect and Manipulation of Perpendicular Magnetization
Hui Wang, Huiying Liu, Xukun Feng, Jin Cao, Weikang Wu, Shen Lai, Weibo Gao, Cong Xiao, Shengyuan A. Yang
Abstract
We propose an intrinsic nonlinear spin Hall effect, which enables the generation of collinearly polarized spin current in a large class of nonmagnetic materials with the corresponding linear response being symmetry forbidden. This opens a new avenue for field-free switching of perpendicular magnetization, which is required for the next-generation information storage technology. We develop the microscopic theory of this effect and clarify its quantum origin in band geometric quantities which can be enhanced by topological nodal features. Combined with first-principles calculations, we predict pronounced effects at room temperature in topological metals PbTaSe_{2} and PdGa. Our work establishes a fundamental nonlinear response in spin transport and opens the door to exploring spintronic applications based on nonlinear spin Hall effect.