Enhanced Memristive Performance of Double Perovskite Cs<sub>2</sub>AgBiBr<sub>6‐<i>x</i></sub>Cl<sub><i>x</i></sub> Devices by Chloride Doping
Caixiang Sun, Feifei Luo, Liuxia Ruan, Junwei Tong, Linwei Yan, Yadan Zheng, Xiaoli Han, Yanlin Zhang, Xianmin Zhang
Abstract
Abstract Mixed halide perovskites are promising memristive materials because of their excellent electronic‐ionic properties. In this work, lead‐free Cs 2 AgBiBr 6‐ x Cl x ( x =0, 0.2, 0.4, 0.6, 0.8, 1.0) double perovskite films were fabricated using a one‐step solution spin‐coating method in air. Moreover, the ITO/Cs 2 AgBiBr 6‐ x Cl x /Al sandwich‐like devices are fabricated to investigate the memristive behaviors. The present memristors exhibit nonvolatile and bipolar resistive switching behaviors without electroforming process. Interestingly, as the chloride content increases, the ON/OFF ratio of the device increases from 10 3 to 10 4 , the average SET voltage and the RESET voltage decrease from −0.40 V to −0.21 V and from 1.55 V to 1.34 V, respectively. In addition, resistance states of devices can be maintained after 100 switching cycles and 10 4 s of reading. This study provides new possibility for the development of low‐power and environmentally friendly memristors.