Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory
Junghyeon Hwang, Hunbeom Shin, Chaeheon Kim, Jin Hee Ahn, Sanghun Jeon
Abstract
This study presents a low-damage metallization process for ultra-thin hafnia-based ferroelectric films, achieving high polarization, low leakage currents, and reduced wake-up effect, paving the way for scalable and reliable FeRAM applications.
Topics & Concepts
HafniaMaterials scienceReliability (semiconductor)FerroelectricityReliability engineeringOptoelectronicsComposite materialEngineeringThermodynamicsCeramicPhysicsCubic zirconiaPower (physics)DielectricFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design