1.1 A/mm ß-Ga<sub>2</sub>O<sub>3</sub>-on-SiC RF MOSFETs with 2.3 W/mm P<sub>out</sub> and 30% PAE at 2 GHz and f<sub>T</sub>/f<sub>max</sub> of 27.6/57 GHz
Min Zhou, Hong Zhou, Sen Huang, Mengwei Si, Yuhao Zhang, Tiantian Luan, Hongqing Yue, Kui Dang, Chenlu Wang, Zhihong Liu, Jincheng Zhang, Yue Hao
Abstract
This work demonstrates for the first time the power performance of ß-Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> RF transistors at 2-8 GHz with a record high output power density (P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</inf> ) of 2.3 W/mm and a power-added efficiency (PAE) of 30% at 2 GHz. Such P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</inf> and PAE are 25 and 3 times of previous state-of-the-art ß-Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> RF power devices at 2 GHz, respectively. In addition, the device shows a maximum on-current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D,max</inf> ) of 1.1 A/mm and a f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> /f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> of 27.6/57 GHz, all among the highest in ß-Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> RF devices. Such RF performances are enabled by transferring a heavily-doped ß-Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> channel to a SiC substrate, which significantly reduce the on-resistance and improve the heat dissipation, as well as deploying an insulated and recessed T- gate to simultaneously enhance the frequency performance and electric field management. These results indicate a remarkable progress in the field of ß-Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> RF power devices and show the promise of ß-Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> -on-SiC platform for high-power, high- frequency, high-efficiency RF applications.