SMART Perovskite Growth: Enabling a Larger Range of Process Conditions
Chuanxiao Xiao, Fei Zhang, Xihan Chen, Mengjin Yang, Steven P. Harvey, Matthew C. Beard, Joseph J. Berry, Chun‐Sheng Jiang, Mowafak Al‐Jassim, Kai Zhu
Abstract
Cost-effective, high-throughput industrial applications of metal-halide perovskites require a highly tolerant method (i.e., wide process window) that produces high-quality materials with a short annealing time. Here, we introduce a Seed Modulation for ARTificially controlled nucleation (SMART) process that enables rapid fabrication of high-quality perovskite films under a wide set of initial input parameters. We characterized the thin-film evolution from the perspective of crystallinity, surface potential, diffusivity, surface carrier dynamics, and interfacial recombination. We find that surface and subsurface defects primarily determine the performance of materials and devices. By modulating the seeds for perovskite nucleation, we were able to improve the overall crystallization. We achieved a >20% power conversion efficiency using only a 5 min annealing step, and we found that the annealing window is widened such that differing initial conditions achieve similar quality. Furthermore, we demonstrated reproducibility and performance improvement in larger-area perovskite cells by incorporating the SMART process.