InAs-Based Interband Cascade Laser Operating at 5.17 μm in Continuous Wave Above Room Temperature
Wenxiang Huang, Shiyu Hu, Junjie Tu, Lifang Zhang, Kekai Tao, Peng Wang
Abstract
We report an InAs-based interband cascade laser emitting at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\lambda $ </tex-math></inline-formula> = <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$5.17\mu \text{m}$ </tex-math></inline-formula> in continuous wave mode up to a maximum temperature of 41 °C, that increases the maximum continuous wave operating temperature by 66 °C for InAs-based interband cascade lasers emitting around <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$5.2~\mu \text{m}$ </tex-math></inline-formula> . At <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$T$ </tex-math></inline-formula> = 20 °C, an output power of 10 mW was achieved for a 10- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}\times 2$ </tex-math></inline-formula> -mm ridge waveguide device with one facet coated for high reflection and epitaxial-side-down mounting. The broad-area device processed from the same laser wafer exhibited a pulsed threshold current density as low as 306 A/cm2 at room temperature, the lowest ever reported for semiconductor lasers emitting at similar wavelengths.