Auger-type process in ultrathin ReS<sub>2</sub>
Lei Wang, Saifeng Zhang, Jiawei Huang, Yu Mao, Ningning Dong, Xiaoyan Zhang, I. M. Kislyakov, Hongqiang Wang, Zixin Wang, Chenduan Chen, Long Zhang, Jun Wang
Abstract
The dramatic enhancement of charge carrier interaction makes many-body effects of great prominence in two-dimensional materials. Here we report the defect-assisted Auger scattering combined with band-to-band Auger recombination as playing the dominant recovery mechanism in the charge carriers of atomically thin-layered ReS 2 . Time resolved transient absorption spectra investigation reveals two different decay processes over the visible and near- infrared range, which is attributed to the shallow and deep defects introduced by the existence of sulfur (S) vacancy. A rate equation system is invoked to rationalize our peculiar pump and temperature dependence of carrier dynamics quantitatively. These findings provide theoretical insights into the significant role played by nonradiative Auger processes and may pave the way for the development of diverse ReS 2 -based high performance photonic and optoelectronic devices.