Highly efficient and stable quantum dot light-emitting devices with a low-temperature tin oxide electron transport layer
Haiwei Feng, Shihao Liu, Ge Tang, Letian Zhang, Wenfa Xie
Abstract
UVO treatment is proposed to decompose the residual tin hydroxide in an SnO 2 ETL film. With UVO treatment, efficient and stable QLEDs are fabricated with a low-temperature SnO 2 transport layer.
Topics & Concepts
Materials scienceQuantum dotTinTin oxideLayer (electronics)Electron transport chainHydroxideOptoelectronicsElectronOxideNanotechnologyChemical engineeringMetallurgyChemistryEngineeringPhysicsBiochemistryQuantum mechanicsQuantum Dots Synthesis And PropertiesPerovskite Materials and ApplicationsZnO doping and properties