Critical role of dopant in NiO<sub><i>x</i></sub> hole transport layer for mitigating redox reactivity at NiO<sub><i>x</i></sub>/absorber interface in mixed cation perovskite solar cells
Vidya Sudhakaran Menon, Saraswathi Ganesan, Rohith Kumar Raman, Ananthan Alagumalai, Ananthanarayanan Krishnamoorthy
Abstract
V-dopant’s hard acid electronic nature reduces the Lewis acid-base reaction at NiO x /perovskite interface. This work shows that the redox process mediated by Ni 3+ ions is inhibited even when the Ni 3+ /Ni 2+ ratio rises with doping.
Topics & Concepts
Non-blocking I/OPerovskite (structure)DopantMaterials scienceRedoxReactivity (psychology)Layer (electronics)OxideInorganic chemistryChemical engineeringChemistryNanotechnologyOptoelectronicsDopingCrystallographyCatalysisMetallurgyPathologyEngineeringMedicineBiochemistryAlternative medicinePerovskite Materials and ApplicationsConducting polymers and applicationsChalcogenide Semiconductor Thin Films