A 1.5-to-17 GHz Non-uniform Distributed Power Amplifier Using Reconfigurable Modules in 0.25μm GaN HEMT
Shijie Chen, Fuchen Yan, Yuan Liang, Shu Ma, Dexin Shi, Xiang Li, Huaizong Shao, Tao Yang, Yong Wang
Abstract
This paper demonstrates a fully integrated high-output-power, ultra-wideband, and reconfigurable power amplifier. Based on the improved non-uniform distributed structure, a reconfigurable drain bias choke module, a reconfigurable gate bias choke module and a reconfigurable dumping load module are proposed. The reconfigurable power amplifier has an improvement in input matching, bandwidth, output power and power-added efficiency (PAE). Fabricated in 0.25um GaN process, Measurement results show 37.3-to-39.1 dBm saturated output power (P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</inf> ) with an average PAE of 31% at 2-to-6 GHz, 27% at 6-to-9 GHz, and 28% at 9-to-17 GHz.