Silicon Photonic Crystal Modulators for High-Speed Transmission and Wavelength Division Multiplexing
Yosuke Hinakura, Daichi Akiyama, Hiroyuki Ito, Toshihiko Baba
Abstract
For next-era optical interconnects in data centers, development of compact, energy-efficient, low-cost, and high-speed optical transceivers are required, for which high-performance external modulators in silicon photonics will be key components. We present a silicon photonic crystal waveguide slow light Mach-Zehnder modulator suitable for this purpose. The enhancement in the modulation efficiency via the slow light effect reduces the halfwave voltage-length product VπL, maintaining a wide working spectrum over 15 nm. The frequency response of the slow light modulator is constricted by an electrooptic phase mismatch between slow light and RF signals. In this study, this was dramatically improved by matching the phase using meanderline electrodes that delay RF signals. The cutoff frequency was experimentally evaluated to be 32-38 GHz. Using this device, we demonstrated high-speed modulation, including 64-Gbps on-off keying, 100-Gbps pulse amplitude modulation, and 50-Gbps/ch wavelength division multiplexing in 170-200-μm- long devices.