A 129.83 TOPS/W Area Efficient Digital SOT/STT MRAM-Based Computing-In-Memory for Advanced Edge AI Chips
Lu Lu, Aarthy Mani, Anh Tuan
Abstract
This paper proposes a spin-orbit torque (SOT) magnetoresistive random access memory (MRAM)-based digital computing in memory (CIM) structure for advanced CIM edge AI chips. To avoid frequent data reloading and reduce the area overhead caused by the large transistor in the write path, 11 transistors and 4 shared heavy metal (HM) SOT MRAM bitcell is proposed. It contains 4b weight in a single cell in a compact area able to hold a large capacity with reduced latency. Compared to the previous SRAM+NOR digital CIM design, the SOT/STT MRAM CIM designs occupy only 40% and 30% bitcell area respectively. Additionally, SOT MRAM has a 1.16% leakage current of SRAM at the TT corner at room temperature. The proposed design is verified using statistic simulations in 28nm technology. It achieves 129.83 TOPS/W at 1b/1b/8b precision.