Room-Temperature Blackbody-Sensitive and Fast Infrared Photodetectors Based on 2D Tellurium/Graphene Van der Waals Heterojunction
Meng Peng, Yiye Yu, Zhen Wang, Xiao Fu, Yue Gu, Yang Wang, Kun Zhang, Zhenhan Zhang, Min Huang, Zhuangzhuang Cui, Fang Zhong, Peisong Wu, Jiafu Ye, Tengfei Xu, Qing Li, Peng Wang, Fangyu Yue, Feng Wu, Jiangnan Dai, Changqing Chen, Weida Hu
Abstract
Emerging low-dimensional materials exhibit the potential in realizing next-generation room-temperature blackbody-sensitive infrared detectors. As a narrow band gap semiconductor, low-dimensional tellurium (Te) has been a focus of infrared detector research attention because of its high hole mobility, large absorptivity, and environmental stability. However, it is still a challenge to fabricate blackbody-sensitive Te-based infrared detectors with a low dark current and fast speed. In this work, a heterojunction device based on Te and graphene is constructed, achieving high detectivity and a fast response time from visible to mid-infrared. Specifically, under 2 μm laser irradiation, the heterojunction photodetector exhibits a detectivity of 1.04 × 109 cm Hz1/2 W–1, a fast response time of 28 μs, and good ambient stability. Moreover, the photodetector demonstrates a room-temperature blackbody sensitivity with the peak detectivity of up to 3.69 × 108 cm Hz1/2 W–1 under zero bias. Linear array devices are further explored and show good performance uniformity for potential imaging applications. Our work demonstrates that the Te/graphene heterojunction detector will be one of the competitive candidates for next-generation uncooled blackbody-sensitive infrared photodetectors.