Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films
Mizuki Ohno, Susumu Minami, Yusuke Nakazawa, Sato Shin, M. Kriener, Ryotaro Arita, M. Kawasaki, Masaki Uchida
Abstract
A large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. The recently proposed magnetic Weyl semimetal ${\mathrm{EuCd}}_{2}{\mathrm{Sb}}_{2}$ provides an excellent platform for controlling the intrinsic AHE because it only hosts a Weyl-point-related band structure near the Fermi energy. Here, we report the fabrication of ${\mathrm{EuCd}}_{2}{\mathrm{Sb}}_{2}$ single-crystalline films and control of their anomalous Hall effect by a film technique. As also analyzed by first-principles calculations of energy-dependent intrinsic anomalous Hall conductivity, the obtained anomalous Hall effect shows a sharp peak as a function of carrier density, demonstrating a clear energy dependence of the intrinsic AHE.