Improved reliability of a-IGZO thin-film transistor under positive gate bias stress by utilizing NH3 plasma treatment
Wangran Wu, Wenting Xu, Hao Tian, Guangan Yang, Zuoxu Yu, Tingrui Huang, Weifeng Sun
Topics & Concepts
Thin-film transistorMaterials scienceDegradation (telecommunications)Threshold voltageOptoelectronicsReliability (semiconductor)TransistorPlasmaAmorphous solidStress (linguistics)Electronic engineeringVoltageElectrical engineeringNanotechnologyChemistryLayer (electronics)CrystallographyEngineeringPhysicsLinguisticsPhilosophyQuantum mechanicsPower (physics)Thin-Film Transistor TechnologiesZnO doping and propertiesElectrical and Thermal Properties of Materials