Normalization Indicator of Ion-Induced Radiation Damage in Power VDMOS Transistors
Fengkai Liu, Zhongli Liu, Xin Jin, Shuo Liu, Lei Wu, Jianqun Yang, Jizhou Luo, Ruixiang Xu, Xingji Li
Abstract
This work presents the impact of heavy ion irradiation on vertical-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs), particularly focusing on the ionization and displacement damage pivotal for the operation of devices in space environments. We conducted experiments using irradiation with chlorine, silicon, fluorine, and oxygen ions. Our analysis involves calculating the linear energy transfer (LET) and nonionizing energy loss (NIEL) for various ion incidences, followed by determining the ionizing absorbed dose (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$D _{\mathrm {i}}$ </tex-math></inline-formula>) and displacement absorbed dose (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$D _{\mathrm {d}}$ </tex-math></inline-formula>) based on these parameters. Subsequently, we normalized the effects of heavy ion irradiation by examining the threshold voltage shift (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta V _{\mathrm {TH}}$ </tex-math></inline-formula>) for ionization damage, and the drain-leakage current variation (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta I _{\mathrm {DLC}}$ </tex-math></inline-formula>) and drain-saturation current variation (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta I _{\mathrm {DSC}}$ </tex-math></inline-formula>) for displacement damage. Our findings reveal that the displacement damage, characterized by the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta I _{\mathrm {DLC}}$ </tex-math></inline-formula> indicator, serves as a dependable metric for normalizing the impact across varying ion species. This discovery is significant for the equivalent study of different kinds of spaceborne charged ion irradiation in power VDMOS transistors.