Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors
Xinyu Wang, Xinyu Chen, Jingyi Ma, Saifei Gou, Xiaojiao Guo, Ling Tong, Junqiang Zhu, Yin Xia, Die Wang, Chuming Sheng, Honglei Chen, Zhengzong Sun, Shunli Ma, Antoine Riaud, Zihan Xu, Chunxiao Cong, Zhi‐Jun Qiu, Peng Zhou, Yufeng Xie, Lifeng Bian, Wenzhong Bao
Abstract
Abstract 2D semiconductors, such as molybdenum disulfide (MoS 2 ), have attracted tremendous attention in constructing advanced monolithic integrated circuits (ICs) for future flexible and energy‐efficient electronics. However, the development of large‐scale ICs based on 2D materials is still in its early stage, mainly due to the non‐uniformity of the individual devices and little investigation of device and circuit‐level optimization. Herein, a 4‐inch high‐quality monolayer MoS 2 film is successfully synthesized, which is then used to fabricate top‐gated (TG) MoS 2 field‐effect transistors with wafer‐scale uniformity. Some basic circuits such as static random access memory and ring oscillators are examined. A pass‐transistor logic configuration based on pseudo‐NMOS is then employed to design more complex MoS 2 logic circuits, which are successfully fabricated with proper logic functions tested. These preliminary integration efforts show the promising potential of wafer‐scale 2D semiconductors for application in complex ICs.