Realizing forming-free characteristic by doping Ag into HfO<sub>2</sub>-based RRAM
Chung‐Wei Wu, Chun-Chu Lin, Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Ju Zhou, Wen‐Chung Chen, Yung‐Fang Tan, Yu‐Hsuan Yeh, Sheng‐Yao Chou, Hui‐Chun Huang, Tsung‐Ming Tsai, Simon M. Sze
Abstract
Abstract In this work, Ag-doped HfO 2 -based resistive random access memory (RRAM) with high on-off ratio, low-power consumption and forming-free properties was investigated. We propose the fabrication flow of the RRAM with via-hole structure. After doping Ag into HfO 2 as the switching layer, the devices could execute resistive switching without a high-voltage forming process. The conduction mechanism was subsequently validated by a current fitting analysis. Electric field simulation was also utilized to observe the electric field distribution and finally a physical model was proposed to provide an explanation for the formation and dissolution of the filament.