Atomic and electronic properties of different types of SiC/SiO2 interfaces: First-principles calculations
Lihong Han, Yuanyuan Zou, Baonan Jia, Xiaoning Guan, Hui‐Yan Zhao, Yingshi Hu, Xinhui Zhang, Pengfei Lu
Topics & Concepts
Materials scienceElectronic structureNanotechnologyEngineering physicsChemical physicsComputational chemistryPhysicsEngineeringChemistrySilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design