Resistive switching and role of interfaces in memristive devices based on amorphous NbO<sub><i>x</i></sub> grown by anodic oxidation
Giuseppe Leonetti, Matteo Fretto, Katarzyna Bejtka, Elena Sonia Olivetti, Candido Fabrizio Pirri, Natascia De Leo, Ilia Valov, Gianluca Milano
Abstract
Performances of bipolar Au/NbO x /Nb devices were investigated by correlating the material properties of electrochemically grown NbO x with resistive switching functionalities.
Topics & Concepts
Amorphous solidMemristorNatural bond orbitalMaterials scienceResistive touchscreenAnodic oxidationAnodeOptoelectronicsChemical engineeringNanotechnologyCrystallographyElectrodeChemistryElectrical engineeringPhysical chemistryComputational chemistryEngineeringDensity functional theoryAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsNeuroscience and Neural Engineering