Charge-Carrier Dynamics of Solution-Processed Antimony- and Bismuth-Based Chalcogenide Thin Films
Zhenglin Jia, Marcello Righetto, Yujie Yang, Chelsea Q. Xia, Yanyan Li, Ruiming Li, Yuwei Li, Bin Yu, Yong Liu, Huiming Huang, Michael B. Johnston, Laura M. Herz, Qianqian Lin
Abstract
Chalcogenide-based semiconductors have recently emerged as promising candidates for optoelectronic devices, benefiting from their low-cost, solution processability, excellent stability and tunable optoelectronic properties. However, the understanding of their fundamental optoelectronic properties is far behind the success of device performance and starts to limit their further development. To fill this gap, we conduct a comparative study of chalcogenide absorbers across a wide material space, in order to assess their suitability for different types of applications. We utilize optical-pump terahertz-probe spectroscopy and time-resolved microwave conductivity techniques to fully analyze their charge-carrier dynamics. We show that antimony-based chalcogenide thin films exhibit relatively low charge-carrier mobilities and short lifetimes, compared with bismuth-based chalcogenides. In particular, AgBiS 2 thin films possess the highest mobility, and Sb 2 S 3 thin films have less energetic disorder, which are beneficial for photovoltaic devices. On the contrary, Bi 2 S 3 showed ultralong carrier lifetime and high photoconductive gain, which is beneficial for designing photoconductors.