Detector-grade perovskite single-crystal wafers via stress-free gel-confined solution growth targeting high-resolution ionizing radiation detection
Yilong Song, Lixiang Wang, Yongqiang Shi, Weihui Bi, Jianwu Chen, Mingwei Hao, Anran Wang, Xueying Yang, Yuan Sun, Fan Yu, Liansheng Li, Yanjun Fang, Deren Yang, Qingfeng Dong
Abstract
Abstract Solution-processed organic‒inorganic halide perovskite (OIHP) single crystals (SCs) have demonstrated great potential in ionizing radiation detection due to their outstanding charge transport properties and low-cost preparation. However, the energy resolution (ER) and stability of OIHP detectors still lag far behind those of melt-grown inorganic perovskite and commercial CdZnTe counterparts due to the absence of detector-grade high-quality OIHP SCs. Here, we reveal that the crystallinity and uniformity of OIHP SCs are drastically improved by relieving interfacial stress with a facial gel-confined solution growth strategy, thus enabling the direct preparation of large-area detector-grade SC wafers up to 4 cm with drastically suppressed electronic and ionic defects. The resultant radiation detectors show both a small dark current below 1 nA and excellent baseline stability of 4.0 × 10 −8 nA cm −1 s −1 V −1 , which are rarely realized in OIHP detectors. Consequently, a record high ER of 4.9% at 59.5 keV is achieved under a standard 241 Am gamma-ray source with an ultralow operating bias of 5 V, representing the best gamma-ray spectroscopy performance among all solution-processed semiconductor radiation detectors ever reported.