Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates
Akihiro Ohtake, Takaaki Mano, Yoshiki Sakuma
Abstract
Strain relaxation processes in InAs heteroepitaxy have been studied. While InAs grows in a layer-by-layer mode on lattice-mismatched substrates of GaAs(111)A, Si(111), and GaSb(111)A, the strain relaxation process strongly depends on the lattice mismatch. The density of threading defects in the InAs film increases with lattice mismatch. We found that the peak width in x-ray diffraction is insensitive to the defect density, but critically depends on the residual lattice strain in InAs films.
Topics & Concepts
Condensed matter physicsMaterials scienceLattice (music)DiffractionRelaxation (psychology)Strain (injury)Stress relaxationCrystallographyChemistryOpticsPhysicsComposite materialInternal medicinePsychologyAcousticsCreepMedicineSocial psychologySemiconductor Quantum Structures and DevicesAdvanced Semiconductor Detectors and MaterialsSemiconductor materials and devices