Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology
Farzaneh Izadinasab, Morteza Gholipour
Topics & Concepts
InterleavingNoise marginTransistorReduction (mathematics)CMOSElectronic engineeringPower (physics)Computer scienceStatic random-access memoryDynamic demandNoise (video)Electrical engineeringVoltageEngineeringPhysicsMathematicsArtificial intelligenceQuantum mechanicsGeometryImage (mathematics)Advanced Memory and Neural ComputingSemiconductor materials and devicesFerroelectric and Negative Capacitance Devices