A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation
Hyeong Pil Kim, Maria Vasilopoulou, Habib Ullah, Salma Bibi, Anderson Emanuel Ximim Gavim, Andréia G. Macedo, Wilson José da Silva, Fábio Kurt Schneider, Asif Ali Tahir, Mohd Asri Mat Teridi, Peng Gao, Abd. Rashid bin Mohd Yusoff, Mohammad Khaja Nazeeruddin
Abstract
reported to date for any perovskite transistor. These remarkable achievements obtained through a cost-effective molecular cross-linking of grains combined with amine-based surface passivation of the perovskite films open a new era and pave the way for the practical application of perovskite transistors in low-cost electronic circuits.
Topics & Concepts
PassivationPerovskite (structure)HysteresisMaterials scienceTransistorAmine gas treatingStability (learning theory)NanotechnologyChemical engineeringCondensed matter physicsChemistryVoltageElectrical engineeringComputer scienceLayer (electronics)Organic chemistryPhysicsEngineeringMachine learningPerovskite Materials and ApplicationsQuantum Dots Synthesis And PropertiesConducting polymers and applications