Formation of n-type CoSi monosilicide film which can be used in instrumentation
I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov, Б.Д. Игамов, I. Kh. Turapov
Abstract
There arises the formation of thin films of cobalt monosilicide (CoSi) deposited into the base surface of SiO 2 /Si (111) using magnetron ion-plasma sputtering and subsequent thermal annealing. It was found that, in addition to the formation of CoSi silicide, also there are Co and Si atoms that do not form bonds on the surface. Therefore, in this work, we studied the surface morphology and composition of a CoSi silicon target using a scanning electron microscope. The study, silicide CoSi, was chosen as the target and standard SiO 2 /Si (111) was used as the substrate. The surface morphology and composition of the CoSi silicon film obtained by scanning electron microscopy had been studied. The paper reports on a method, morphology of the surface of a CoSi silicon film obtained using Raman microscopy. The results obtained are based on the fact that they were obtained using a modern magnetron sputterer, a high-vacuum thermal heater and modern devices.