High-threshold-voltage and low-leakage-current of normally-off H-diamond FET with self-aligned Zr/ZrO2 gate
Wang Fei, Guoqi Chen, Wei Wang, M.H. Zhang, Shi He, Guoqing Shao, Y.F. Wang, Wenbo Hu, Hongxing Wang
Topics & Concepts
DiamondMaterials scienceOptoelectronicsLeakage (economics)TransistorWaferSchottky diodeField-effect transistorThreshold voltageSchottky barrierAnalytical Chemistry (journal)VoltageElectrical engineeringDiodeChemistryMetallurgyEconomicsChromatographyMacroeconomicsEngineeringDiamond and Carbon-based Materials ResearchSemiconductor materials and devicesMetal and Thin Film Mechanics