High-performance near-infrared photodetector based on quasi one-dimensional layered (TaSe4)2I
Jiaxin Cheng, Chao An, Liang Li, Lijie Chen, Yana Cui, Qijie Yan, Yanling Yin, Weichang Zhou, Yuehua Peng, Weike Wang, Dongsheng Tang
Abstract
Infrared photodetectors have attracted great interest due to their wide range of applications. (TaSe4)2I nanowires were prepared by the scotch-tape mechanical exfoliation method, and optoelectronic properties are systematically investigated. The (TaSe4)2I photodetector shows superior performance under the leading role of the photo-bolometric effect. Remarkably, the prefabricated photodetector recorded a superior responsivity of 0.792 A W−1 and a high external quantum efficiency of 100.259% under the condition of near-infrared light. These excellent properties suggest that (TaSe4)2I is a highly competitive candidate for high-performance near-infrared photodetectors.