Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties
Nico Kaiser, Tobias Vogel, Alexander Zintler, Stefan Petzold, Alexey Arzumanov, Eszter Piros, Robert Eilhardt, Leopoldo Molina‐Luna, Lambert Alff
Abstract
electron spectroscopic, and transmission electron microscopic methods. With the help of UV/Vis transmission data, we propose a consistent band structure model for the whole oxidation range involving oxygen vacancy-induced in-gap defect states. Our comprehensive study of engineered hafnia thin films has an impact on the design of resistive memory devices and can be transferred to chemically similar suboxide systems.
Topics & Concepts
Materials scienceHafniaSuboxideThin filmOptoelectronicsHafniumDielectricBand gapNanotechnologySiliconCeramicZirconiumCubic zirconiaMetallurgyComposite materialSemiconductor materials and devicesFerroelectric and Negative Capacitance DevicesAdvanced Memory and Neural Computing