A 22.2-43 GHz Gate-Drain Mutually Induced Feedback Low Noise Amplifier in 28-nm CMOS
Ali Ershadi, Samuel Palermo, Kamran Entesari
Abstract
A novel mm-wave low-noise-amplifier (LNA) architecture capable of achieving simultaneous power and noise matching over a large bandwidth is proposed. It is shown that by magnetically coupling a pair of inductors connected at the gate and drain of a transistor, a loss-less (series-series) feedback path from the drain-current to the gate is generated which: 1) Increases the transistor input impedance magnitude, 2) generates a real-impedance part which can be controlled for power-matching, and 3) brings the optimum noise source impedance close to the optimum power matching impedance. The prototype is fabricated in TSMC 28-nm bulk CMOS process. The measured chip is functional from 22.2 to 43 GHz, while providing 21 dB of peak gain, minimum NF of 3.5 dB, and an average IIP3 of −3 dBm.