Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe<sub>2</sub>
Jiawei Li, Shuopei Wang, Li Lü, Zheng Wei, Qinqin Wang, Huacong Sun, Jinpeng Tian, Yutuo Guo, Jieying Liu, Hua Yu, Na Li, Gen Long, Xuedong Bai, Wei Yang, Rong Yang, Dongxia Shi, Guangyu Zhang
Abstract
2D semiconducting transition metal dichalcogenides (TMDs) are considered promising building blocks for emergent electronic and optoelectronic devices. As one of the representatives of 2D semiconductors, monolayer MoSe 2 has excellent electrical and optical properties and has attracted a lot of research interest recently. To realize various device applications, large‐scale synthesis of monolayer MoSe 2 with high crystal quality is critical, yet remains challenging. Herein, the growth of monolayer MoSe 2 at a 4 inch wafer‐scale by chemical vapor deposition is demonstrated. Based on a multisource design and vertical placement of substrates, wafer‐scale continuity and uniformity of layer thickness, e.g., the monolayer, are achieved. This growth technique is also applicable to the wafer‐scale growth of other 2D semiconductors such as WS 2 and MoS 2 .