Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries
Yesheng Li, Leyi Loh, Sifan Li, Li Chen, Bochang Li, Michel Bosman, Kah‐Wee Ang
Topics & Concepts
Materials scienceResistive random-access memoryMemristorReset (finance)Neuromorphic engineeringCrossbar switchGrain boundaryOptoelectronicsVoltageComposite materialElectronic engineeringElectrical engineeringComputer scienceMicrostructureEngineeringArtificial neural networkEconomicsFinancial economicsMachine learningAdvanced Memory and Neural ComputingNeural dynamics and brain functionFerroelectric and Negative Capacitance Devices