Litcius/Paper detail

Ambipolar transport in two-dimensional Sn-based perovskite field-effect transistors using an aliphatic polymer-assisted method

Fan Zhang, Quan Zhang, Xin Liu, Liang Qin, Yufeng Hu, Zhidong Lou, Yanbing Hou, Feng Teng

2021Journal of Materials Chemistry A20 citationsDOI

Abstract

We report on ambipolar characteristics in the (PEA) 2 SnI 4 :PEO field-effect transistors because of the defect passivation by Sn–O coordination interactions.

Topics & Concepts

Ambipolar diffusionPassivationMaterials scienceTransistorField-effect transistorPerovskite (structure)PolymerOptoelectronicsNanotechnologyChemistryCrystallographyElectrical engineeringLayer (electronics)EngineeringPhysicsComposite materialPlasmaVoltageQuantum mechanicsPerovskite Materials and ApplicationsOrganic and Molecular Conductors ResearchElectronic and Structural Properties of Oxides
Ambipolar transport in two-dimensional Sn-based perovskite field-effect transistors using an aliphatic polymer-assisted method | Litcius