Kinetic acceleration of MoS <sub>2</sub> growth by oxy-metal-organic chemical vapor deposition
Lei Liu, Yushu Wang, Ruikang Dong, Dongxu Fan, Si Meng, Lang Wu, Shengqiang Wu, Wei Xu, M. S. Feng, Ningmu Zou, Qingyu Yan, Zehua Hu, Fei Lu, Shitong Zhu, Yuan Gao, Liang Ma, Yi Shi, Taotao Li, jinlan wang, Xinran Wang
Abstract
Kinetics determine the growth behavior of thin films, particularly for atomically thin transition-metal dichalcogenides. Metal-organic (MO) chemical vapor deposition (CVD) offers promise for scalable growth, but the reactions are kinetically limited, leading to nanometer-scale domain size and carbon contaminations. Here, we unveil the fundamental kinetic limitations and overcome them by introducing oxygen-assisted MOCVD (oxy-MOCVD) technology. By tuning reactions with oxygen, MO precursors are converted into high-purity transition-metal oxides and chalcogens, producing aligned molybdenum disulfide (MoS 2 ) domains with a size and growth rate that are orders of magnitude larger than conventional MOCVD. The MoS 2 is free of carbon impurities and exhibits average mobility exceeding 100 square centimeters per volt per second. The scalability of oxy-MOCVD is demonstrated by 150-millimeter single-crystal MoS 2 wafers, proving the feasibility of industrial-scale production.