High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters
Chen Shang, Eamonn T. Hughes, Yating Wan, Mario Dumont, Rosalyn Koscica, Jennifer Selvidge, Robert W. Herrick, A. C. Gossard, Kunal Mukherjee, John E. Bowers
Abstract
Direct epitaxial growth of III-V light sources on Si photonic chips is promising to realize low-cost and high-functionality photonic integrated circuits. Historically, high temperature reliability of such devices has been the major roadblock due to crystalline defects from heteroepitaxy. Here, by reducing the threading dislocation densities to <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mo>∼</mml:mo> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>1</mml:mn> </mml:mrow> </mml:mrow> <mml:mo>×</mml:mo> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>1</mml:mn> </mml:mrow> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msup> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>0</mml:mn> </mml:mrow> </mml:mrow> <mml:mn>6</mml:mn> </mml:msup> </mml:mrow> <mml:mspace width="thickmathspace"/> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mi mathvariant="normal">c</mml:mi> </mml:mrow> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msup> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mi mathvariant="normal">m</mml:mi> </mml:mrow> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mo>−</mml:mo> <mml:mn>2</mml:mn> </mml:mrow> </mml:msup> </mml:mrow> </mml:math> and efficiently removing misfit dislocations above and below the active region, 1.3 µm InAs quantum-dot lasers directly grown on industry standard on-axis Si (001) show record-breaking reliability at 80°C. The hero device shows minimum degradation after more than 1200 h of constant current stress. Statistical analysis shows an extrapolated lifetime of over 22 years for the median devices, bringing these devices one big step closer to real world applications.